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STL4N10F7

STL4N10F7

For Reference Only

Part Number STL4N10F7
PNEDA Part # STL4N10F7
Description MOSFET N-CH 100V 4.5A 8PWRFLAT
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,460
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STL4N10F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTL4N10F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STL4N10F7, STL4N10F7 Datasheet (Total Pages: 14, Size: 634.25 KB)
PDFSTL4N10F7 Datasheet Cover
STL4N10F7 Datasheet Page 2 STL4N10F7 Datasheet Page 3 STL4N10F7 Datasheet Page 4 STL4N10F7 Datasheet Page 5 STL4N10F7 Datasheet Page 6 STL4N10F7 Datasheet Page 7 STL4N10F7 Datasheet Page 8 STL4N10F7 Datasheet Page 9 STL4N10F7 Datasheet Page 10 STL4N10F7 Datasheet Page 11

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STL4N10F7 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds408pF @ 50V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (3.3x3.3)
Package / Case8-PowerVDFN

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