STL8N65M2
For Reference Only
| Part Number | STL8N65M2 |
| PNEDA Part # | STL8N65M2 |
| Description | MOSFET N-CH 650V 5A PWRFLAT56 HV |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 5,994 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STL8N65M2 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STL8N65M2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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STL8N65M2 Specifications
| Manufacturer | STMicroelectronics |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | - |
| Package / Case | - |
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Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V FET Feature - Power Dissipation (Max) 360mW (Ta), 2.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1006-3 Package / Case SC-101, SOT-883 |
