Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STL8N65M5

STL8N65M5

For Reference Only

Part Number STL8N65M5
PNEDA Part # STL8N65M5
Description MOSFET N-CH 650V 7A POWERFLAT
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,178
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STL8N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTL8N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STL8N65M5, STL8N65M5 Datasheet (Total Pages: 13, Size: 1,026.31 KB)
PDFSTL8N65M5 Datasheet Cover
STL8N65M5 Datasheet Page 2 STL8N65M5 Datasheet Page 3 STL8N65M5 Datasheet Page 4 STL8N65M5 Datasheet Page 5 STL8N65M5 Datasheet Page 6 STL8N65M5 Datasheet Page 7 STL8N65M5 Datasheet Page 8 STL8N65M5 Datasheet Page 9 STL8N65M5 Datasheet Page 10 STL8N65M5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STL8N65M5 Datasheet
  • where to find STL8N65M5
  • STMicroelectronics

  • STMicroelectronics STL8N65M5
  • STL8N65M5 PDF Datasheet
  • STL8N65M5 Stock

  • STL8N65M5 Pinout
  • Datasheet STL8N65M5
  • STL8N65M5 Supplier

  • STMicroelectronics Distributor
  • STL8N65M5 Price
  • STL8N65M5 Distributor

STL8N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta), 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds690pF @ 100V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFLAT™ (5x5)
Package / Case14-PowerVQFN

The Products You May Be Interested In

IRFR3710ZTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2930pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPP126N10N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

12.3mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 50V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

AOTF15S65L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

841pF @ 100V

FET Feature

-

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3F

Package / Case

TO-220-3 Full Pack

IPP07N03LB G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2782pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPP05N03LA

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.9mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

SMBJ10A

SMBJ10A

Taiwan Semiconductor Corporation

TVS DIODE 10V 17V DO214AA

ADUM1100ARZ

ADUM1100ARZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 55A POWERPAKSO-8

AP2111MPG-13

AP2111MPG-13

Diodes Incorporated

IC USB SWITCH 2.45A CURR 8MSOP

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

EC3SA-12S15N

EC3SA-12S15N

Cincon Electronics Co. LTD

ISOLATED DC/DC CONVERTERS 2.31-3

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

SF-1206S400-2

SF-1206S400-2

Bourns

FUSE BOARD MOUNT 4A 32VDC 1206

FA-20H 16.0000MF10Z-AJ0

FA-20H 16.0000MF10Z-AJ0

EPSON

CRYSTAL 16.0000MHZ 8PF SMD

MAX3224EEAP+T

MAX3224EEAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP