Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STN3NF06L

STN3NF06L

For Reference Only

Part Number STN3NF06L
PNEDA Part # STN3NF06L
Description MOSFET N-CH 60V 4A SOT223
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 75,354
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STN3NF06L Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTN3NF06L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STN3NF06L, STN3NF06L Datasheet (Total Pages: 12, Size: 666.21 KB)
PDFSTN3NF06L Datasheet Cover
STN3NF06L Datasheet Page 2 STN3NF06L Datasheet Page 3 STN3NF06L Datasheet Page 4 STN3NF06L Datasheet Page 5 STN3NF06L Datasheet Page 6 STN3NF06L Datasheet Page 7 STN3NF06L Datasheet Page 8 STN3NF06L Datasheet Page 9 STN3NF06L Datasheet Page 10 STN3NF06L Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STN3NF06L Datasheet
  • where to find STN3NF06L
  • STMicroelectronics

  • STMicroelectronics STN3NF06L
  • STN3NF06L PDF Datasheet
  • STN3NF06L Stock

  • STN3NF06L Pinout
  • Datasheet STN3NF06L
  • STN3NF06L Supplier

  • STMicroelectronics Distributor
  • STN3NF06L Price
  • STN3NF06L Distributor

STN3NF06L Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds340pF @ 25V
FET Feature-
Power Dissipation (Max)3.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

SI7615DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

183nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

STW18NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

285mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 50V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

HUF75623S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

64mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

790pF @ 25V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFT12N100F

IXYS-RF

Manufacturer

IXYS-RF

Series

HiPerRF™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

77nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268 (IXFT)

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

STE140NF20D

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

338nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11100pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP

Package / Case

SOT-227-4, miniBLOC

Recently Sold

IRLML6402TRPBF

IRLML6402TRPBF

Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23

DS5000FP-16

DS5000FP-16

Maxim Integrated

IC MCU 8BIT EXTRNL NVSRAM 80QFP

11R472C

11R472C

Murata Power Solutions

FIXED IND 4.7UH 1.3A 90 MOHM TH

HX2019NLT

HX2019NLT

Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100

TCS-DL004-500-WH

TCS-DL004-500-WH

Bourns

SUPPRESSOR TCS DUAL 40V 500MA

MMSZ5226B-7-F

MMSZ5226B-7-F

Diodes Incorporated

DIODE ZENER 3.3V 500MW SOD123

PIC16F77-I/P

PIC16F77-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 40DIP

MT40A512M16LY-062E IT:E

MT40A512M16LY-062E IT:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

FODM121AR2

FODM121AR2

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

2SA1037AKT146R

2SA1037AKT146R

Rohm Semiconductor

TRANS PNP 50V 0.15A SOT-346

SD1127

SD1127

Microsemi

RF TRANS NPN 18V 175MHZ TO39

RB521S-30TE61

RB521S-30TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2