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STP11NM50N

STP11NM50N

For Reference Only

Part Number STP11NM50N
PNEDA Part # STP11NM50N
Description MOSFET N-CH 500V 9A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP11NM50N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP11NM50N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP11NM50N, STP11NM50N Datasheet (Total Pages: 13, Size: 466.76 KB)
PDFSTP11NM50N Datasheet Cover
STP11NM50N Datasheet Page 2 STP11NM50N Datasheet Page 3 STP11NM50N Datasheet Page 4 STP11NM50N Datasheet Page 5 STP11NM50N Datasheet Page 6 STP11NM50N Datasheet Page 7 STP11NM50N Datasheet Page 8 STP11NM50N Datasheet Page 9 STP11NM50N Datasheet Page 10 STP11NM50N Datasheet Page 11

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STP11NM50N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds547pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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