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STP13N80K5

STP13N80K5

For Reference Only

Part Number STP13N80K5
PNEDA Part # STP13N80K5
Description MOSFET N-CH 800V 12A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP13N80K5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP13N80K5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP13N80K5, STP13N80K5 Datasheet (Total Pages: 23, Size: 1,203.7 KB)
PDFSTB13N80K5 Datasheet Cover
STB13N80K5 Datasheet Page 2 STB13N80K5 Datasheet Page 3 STB13N80K5 Datasheet Page 4 STB13N80K5 Datasheet Page 5 STB13N80K5 Datasheet Page 6 STB13N80K5 Datasheet Page 7 STB13N80K5 Datasheet Page 8 STB13N80K5 Datasheet Page 9 STB13N80K5 Datasheet Page 10 STB13N80K5 Datasheet Page 11

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STP13N80K5 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH5™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 6A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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