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STP165N10F4

STP165N10F4

For Reference Only

Part Number STP165N10F4
PNEDA Part # STP165N10F4
Description MOSFET N-CH 100V 120A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP165N10F4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP165N10F4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP165N10F4, STP165N10F4 Datasheet (Total Pages: 12, Size: 674.81 KB)
PDFSTP165N10F4 Datasheet Cover
STP165N10F4 Datasheet Page 2 STP165N10F4 Datasheet Page 3 STP165N10F4 Datasheet Page 4 STP165N10F4 Datasheet Page 5 STP165N10F4 Datasheet Page 6 STP165N10F4 Datasheet Page 7 STP165N10F4 Datasheet Page 8 STP165N10F4 Datasheet Page 9 STP165N10F4 Datasheet Page 10 STP165N10F4 Datasheet Page 11

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STP165N10F4 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
FET Feature-
Power Dissipation (Max)315W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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