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STP16N50M2

STP16N50M2

For Reference Only

Part Number STP16N50M2
PNEDA Part # STP16N50M2
Description MOSFET N-CH 500V 13A TO-220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP16N50M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP16N50M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP16N50M2, STP16N50M2 Datasheet (Total Pages: 24, Size: 734.95 KB)
PDFSTD16N50M2 Datasheet Cover
STD16N50M2 Datasheet Page 2 STD16N50M2 Datasheet Page 3 STD16N50M2 Datasheet Page 4 STD16N50M2 Datasheet Page 5 STD16N50M2 Datasheet Page 6 STD16N50M2 Datasheet Page 7 STD16N50M2 Datasheet Page 8 STD16N50M2 Datasheet Page 9 STD16N50M2 Datasheet Page 10 STD16N50M2 Datasheet Page 11

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STP16N50M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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