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STP18N60M2

STP18N60M2

For Reference Only

Part Number STP18N60M2
PNEDA Part # STP18N60M2
Description MOSFET N-CH 600V TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,182
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP18N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP18N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP18N60M2, STP18N60M2 Datasheet (Total Pages: 27, Size: 856.99 KB)
PDFSTB18N60M2 Datasheet Cover
STB18N60M2 Datasheet Page 2 STB18N60M2 Datasheet Page 3 STB18N60M2 Datasheet Page 4 STB18N60M2 Datasheet Page 5 STB18N60M2 Datasheet Page 6 STB18N60M2 Datasheet Page 7 STB18N60M2 Datasheet Page 8 STB18N60M2 Datasheet Page 9 STB18N60M2 Datasheet Page 10 STB18N60M2 Datasheet Page 11

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STP18N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds791pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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