Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP200N6F3

STP200N6F3

For Reference Only

Part Number STP200N6F3
PNEDA Part # STP200N6F3
Description MOSFET N-CH 60V 120A TO220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,934
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP200N6F3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP200N6F3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP200N6F3, STP200N6F3 Datasheet (Total Pages: 16, Size: 852.51 KB)
PDFSTI200N6F3 Datasheet Cover
STI200N6F3 Datasheet Page 2 STI200N6F3 Datasheet Page 3 STI200N6F3 Datasheet Page 4 STI200N6F3 Datasheet Page 5 STI200N6F3 Datasheet Page 6 STI200N6F3 Datasheet Page 7 STI200N6F3 Datasheet Page 8 STI200N6F3 Datasheet Page 9 STI200N6F3 Datasheet Page 10 STI200N6F3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP200N6F3 Datasheet
  • where to find STP200N6F3
  • STMicroelectronics

  • STMicroelectronics STP200N6F3
  • STP200N6F3 PDF Datasheet
  • STP200N6F3 Stock

  • STP200N6F3 Pinout
  • Datasheet STP200N6F3
  • STP200N6F3 Supplier

  • STMicroelectronics Distributor
  • STP200N6F3 Price
  • STP200N6F3 Distributor

STP200N6F3 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IPD50R3K0CEBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

3Ohm @ 400mA, 13V

Vgs(th) (Max) @ Id

3.5V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

4.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

84pF @ 100V

FET Feature

-

Power Dissipation (Max)

18W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

APT58M50JU2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

340nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10800pF @ 25V

FET Feature

-

Power Dissipation (Max)

543W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

IRFH5015TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

31mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerVDFN

64-2105PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4340pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

AO3421E

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

95mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

215pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3L

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

S558-5999-Q3-F

S558-5999-Q3-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 48P SMD

TS30013-M050QFNR

TS30013-M050QFNR

Semtech

IC REG BUCK 5V 3A 16QFN

RB521S-30TE61

RB521S-30TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

250R05L0R4AV4T

250R05L0R4AV4T

Johanson Technology

CAP CER 0.4PF 25V C0G/NP0 0201

SMBJ12CA

SMBJ12CA

TVS DIODE 12V 19.9V SMB

BZX84C3V3LT1G

BZX84C3V3LT1G

ON Semiconductor

DIODE ZENER 3.3V 225MW SOT23-3

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD

74HC74D

74HC74D

Toshiba Semiconductor and Storage

IC FF D-TYPE DUAL 1BIT 14SOIC

MAX3491ESD+T

MAX3491ESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC