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STP25N10F7

STP25N10F7

For Reference Only

Part Number STP25N10F7
PNEDA Part # STP25N10F7
Description MOSFET N-CH 100V 25A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP25N10F7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP25N10F7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP25N10F7, STP25N10F7 Datasheet (Total Pages: 21, Size: 1,281.53 KB)
PDFSTD25N10F7 Datasheet Cover
STD25N10F7 Datasheet Page 2 STD25N10F7 Datasheet Page 3 STD25N10F7 Datasheet Page 4 STD25N10F7 Datasheet Page 5 STD25N10F7 Datasheet Page 6 STD25N10F7 Datasheet Page 7 STD25N10F7 Datasheet Page 8 STD25N10F7 Datasheet Page 9 STD25N10F7 Datasheet Page 10 STD25N10F7 Datasheet Page 11

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STP25N10F7 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs35mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 50V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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