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STP26N60DM6

STP26N60DM6

For Reference Only

Part Number STP26N60DM6
PNEDA Part # STP26N60DM6
Description N-CHANNEL 600 V 0.110 OHM TYP. 2
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,584
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP26N60DM6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP26N60DM6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP26N60DM6, STP26N60DM6 Datasheet (Total Pages: 13, Size: 272.73 KB)
PDFSTP26N60DM6 Datasheet Cover
STP26N60DM6 Datasheet Page 2 STP26N60DM6 Datasheet Page 3 STP26N60DM6 Datasheet Page 4 STP26N60DM6 Datasheet Page 5 STP26N60DM6 Datasheet Page 6 STP26N60DM6 Datasheet Page 7 STP26N60DM6 Datasheet Page 8 STP26N60DM6 Datasheet Page 9 STP26N60DM6 Datasheet Page 10 STP26N60DM6 Datasheet Page 11

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STP26N60DM6 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs195mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds940pF @ 100V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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