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STP28N60DM2

STP28N60DM2

For Reference Only

Part Number STP28N60DM2
PNEDA Part # STP28N60DM2
Description MOSFET N-CH 600V 21A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP28N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP28N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP28N60DM2, STP28N60DM2 Datasheet (Total Pages: 20, Size: 914.29 KB)
PDFSTB28N60DM2 Datasheet Cover
STB28N60DM2 Datasheet Page 2 STB28N60DM2 Datasheet Page 3 STB28N60DM2 Datasheet Page 4 STB28N60DM2 Datasheet Page 5 STB28N60DM2 Datasheet Page 6 STB28N60DM2 Datasheet Page 7 STB28N60DM2 Datasheet Page 8 STB28N60DM2 Datasheet Page 9 STB28N60DM2 Datasheet Page 10 STB28N60DM2 Datasheet Page 11

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STP28N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 100V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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