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STP45N60DM2AG

STP45N60DM2AG

For Reference Only

Part Number STP45N60DM2AG
PNEDA Part # STP45N60DM2AG
Description MOSFET N-CH 600V 34A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,936
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP45N60DM2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP45N60DM2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP45N60DM2AG, STP45N60DM2AG Datasheet (Total Pages: 13, Size: 407.14 KB)
PDFSTP45N60DM2AG Datasheet Cover
STP45N60DM2AG Datasheet Page 2 STP45N60DM2AG Datasheet Page 3 STP45N60DM2AG Datasheet Page 4 STP45N60DM2AG Datasheet Page 5 STP45N60DM2AG Datasheet Page 6 STP45N60DM2AG Datasheet Page 7 STP45N60DM2AG Datasheet Page 8 STP45N60DM2AG Datasheet Page 9 STP45N60DM2AG Datasheet Page 10 STP45N60DM2AG Datasheet Page 11

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STP45N60DM2AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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