Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STP60NE06-16

STP60NE06-16

For Reference Only

Part Number STP60NE06-16
PNEDA Part # STP60NE06-16
Description MOSFET N-CH 60V 60A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,068
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP60NE06-16 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP60NE06-16
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP60NE06-16, STP60NE06-16 Datasheet (Total Pages: 11, Size: 283.41 KB)
PDFSTP60NE06-16 Datasheet Cover
STP60NE06-16 Datasheet Page 2 STP60NE06-16 Datasheet Page 3 STP60NE06-16 Datasheet Page 4 STP60NE06-16 Datasheet Page 5 STP60NE06-16 Datasheet Page 6 STP60NE06-16 Datasheet Page 7 STP60NE06-16 Datasheet Page 8 STP60NE06-16 Datasheet Page 9 STP60NE06-16 Datasheet Page 10 STP60NE06-16 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STP60NE06-16 Datasheet
  • where to find STP60NE06-16
  • STMicroelectronics

  • STMicroelectronics STP60NE06-16
  • STP60NE06-16 PDF Datasheet
  • STP60NE06-16 Stock

  • STP60NE06-16 Pinout
  • Datasheet STP60NE06-16
  • STP60NE06-16 Supplier

  • STMicroelectronics Distributor
  • STP60NE06-16 Price
  • STP60NE06-16 Distributor

STP60NE06-16 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6200pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

FDG330P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

110mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

477pF @ 6V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88 (SC-70-6)

Package / Case

6-TSSOP, SC-88, SOT-363

IRFSL3507

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

97A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3540pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FDMC4436BZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

FQPF32N20C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2220pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

DMG3N60SCT

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

354pF @ 25V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

766161102GPTR13

766161102GPTR13

CTS Resistor Products

RES ARRAY 15 RES 1K OHM 16SOIC

IS34ML01G081-TLI-TR

IS34ML01G081-TLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 1G PARALLEL 48TSOP I

MAX3051ESA+T

MAX3051ESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

ADP125ARHZ-R7

ADP125ARHZ-R7

Analog Devices

IC REG LIN POS ADJ 500MA 8MSOP

SFH6106-2T

SFH6106-2T

Vishay Semiconductor Opto Division

OPTOISOLATOR 5.3KV TRANS 4-SMD

RJR26FW102R

RJR26FW102R

Bourns

TRIMMER 1K OHM 0.25W PC PIN TOP

5CEFA4U19C8N

5CEFA4U19C8N

Intel

IC FPGA 224 I/O 484UBGA

BC807-25,215

BC807-25,215

Nexperia

TRANS PNP 45V 0.5A SOT23

1SMB28AT3G

1SMB28AT3G

Littelfuse

TVS DIODE 28V 45.4V SMB

MUR1100ERLG

MUR1100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 1A AXIAL

DALC208SC6

DALC208SC6

STMicroelectronics

TVS DIODE 5V SOT23-6

LT1120ACS8#PBF

LT1120ACS8#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 125MA 8SOIC