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STQ1HN60K3-AP

STQ1HN60K3-AP

For Reference Only

Part Number STQ1HN60K3-AP
PNEDA Part # STQ1HN60K3-AP
Description MOSFET N-CH 600V 0.4A TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ1HN60K3-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ1HN60K3-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ1HN60K3-AP, STQ1HN60K3-AP Datasheet (Total Pages: 14, Size: 1,181.25 KB)
PDFSTQ1HN60K3-AP Datasheet Cover
STQ1HN60K3-AP Datasheet Page 2 STQ1HN60K3-AP Datasheet Page 3 STQ1HN60K3-AP Datasheet Page 4 STQ1HN60K3-AP Datasheet Page 5 STQ1HN60K3-AP Datasheet Page 6 STQ1HN60K3-AP Datasheet Page 7 STQ1HN60K3-AP Datasheet Page 8 STQ1HN60K3-AP Datasheet Page 9 STQ1HN60K3-AP Datasheet Page 10 STQ1HN60K3-AP Datasheet Page 11

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STQ1HN60K3-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 50V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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