STQ1HNK60R-AP
For Reference Only
| Part Number | STQ1HNK60R-AP |
| PNEDA Part # | STQ1HNK60R-AP |
| Description | MOSFET N-CH 600V 400MA TO-92 |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 29,280 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STQ1HNK60R-AP Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STQ1HNK60R-AP |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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STQ1HNK60R-AP Specifications
| Manufacturer | STMicroelectronics |
| Series | SuperMESH™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 680mOhm @ 7A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta), 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FI(LS) Package / Case TO-220-3 Full Pack |
