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STQ1NC45R-AP

STQ1NC45R-AP

For Reference Only

Part Number STQ1NC45R-AP
PNEDA Part # STQ1NC45R-AP
Description MOSFET N-CH 450V 0.5A TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,984
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ1NC45R-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ1NC45R-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ1NC45R-AP, STQ1NC45R-AP Datasheet (Total Pages: 15, Size: 324.29 KB)
PDFSTQ1NC45R-AP Datasheet Cover
STQ1NC45R-AP Datasheet Page 2 STQ1NC45R-AP Datasheet Page 3 STQ1NC45R-AP Datasheet Page 4 STQ1NC45R-AP Datasheet Page 5 STQ1NC45R-AP Datasheet Page 6 STQ1NC45R-AP Datasheet Page 7 STQ1NC45R-AP Datasheet Page 8 STQ1NC45R-AP Datasheet Page 9 STQ1NC45R-AP Datasheet Page 10 STQ1NC45R-AP Datasheet Page 11

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STQ1NC45R-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)450V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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