Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STQ2NK60ZR-AP

STQ2NK60ZR-AP

For Reference Only

Part Number STQ2NK60ZR-AP
PNEDA Part # STQ2NK60ZR-AP
Description MOSFET N-CH 600V 0.4A TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ2NK60ZR-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ2NK60ZR-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ2NK60ZR-AP, STQ2NK60ZR-AP Datasheet (Total Pages: 16, Size: 501.98 KB)
PDFSTP2NK60Z Datasheet Cover
STP2NK60Z Datasheet Page 2 STP2NK60Z Datasheet Page 3 STP2NK60Z Datasheet Page 4 STP2NK60Z Datasheet Page 5 STP2NK60Z Datasheet Page 6 STP2NK60Z Datasheet Page 7 STP2NK60Z Datasheet Page 8 STP2NK60Z Datasheet Page 9 STP2NK60Z Datasheet Page 10 STP2NK60Z Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STQ2NK60ZR-AP Datasheet
  • where to find STQ2NK60ZR-AP
  • STMicroelectronics

  • STMicroelectronics STQ2NK60ZR-AP
  • STQ2NK60ZR-AP PDF Datasheet
  • STQ2NK60ZR-AP Stock

  • STQ2NK60ZR-AP Pinout
  • Datasheet STQ2NK60ZR-AP
  • STQ2NK60ZR-AP Supplier

  • STMicroelectronics Distributor
  • STQ2NK60ZR-AP Price
  • STQ2NK60ZR-AP Distributor

STQ2NK60ZR-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

The Products You May Be Interested In

SSM3K376R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

56mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 4.5V

Vgs (Max)

+12V, -8V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

STP34NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 14.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80.4nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2785pF @ 50V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRFB7746PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

10.6mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

83nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3049pF @ 25V

FET Feature

-

Power Dissipation (Max)

99W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AOTF4N60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

615pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

IRF1104STRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI

Cypress Semiconductor

IC SRAM 64M PARALLEL 48FBGA

M30624FGPGP#U3C

M30624FGPGP#U3C

Renesas Electronics America

IC MCU 16BIT 256KB FLASH 100QFP

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

MMA8451QR1

MMA8451QR1

NXP

ACCELEROMETER 2-8G I2C 16QFN

STW14NM50

STW14NM50

STMicroelectronics

MOSFET N-CH 550V 14A TO-247

LM2904AQTH-13

LM2904AQTH-13

Diodes Incorporated

IC OPAMP GP 2 CIRCUIT 8TSSOP

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

7447709330

7447709330

Wurth Electronics

FIXED IND 33UH 4.2A 45 MOHM SMD

ASDXRRX001PGAA5

ASDXRRX001PGAA5

Honeywell Sensing and Productivity Solutions

SENSOR PRESS GAUGE ANALOG 0-1PSI

DS1225AD-150IND

DS1225AD-150IND

Maxim Integrated

IC NVSRAM 64K PARALLEL 28EDIP

2N7002-7-F

2N7002-7-F

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA