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STQ3NK50ZR-AP

STQ3NK50ZR-AP

For Reference Only

Part Number STQ3NK50ZR-AP
PNEDA Part # STQ3NK50ZR-AP
Description MOSFET N-CH 500V 500MA TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ3NK50ZR-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ3NK50ZR-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ3NK50ZR-AP, STQ3NK50ZR-AP Datasheet (Total Pages: 14, Size: 472.04 KB)
PDFSTQ3NK50ZR-AP Datasheet Cover
STQ3NK50ZR-AP Datasheet Page 2 STQ3NK50ZR-AP Datasheet Page 3 STQ3NK50ZR-AP Datasheet Page 4 STQ3NK50ZR-AP Datasheet Page 5 STQ3NK50ZR-AP Datasheet Page 6 STQ3NK50ZR-AP Datasheet Page 7 STQ3NK50ZR-AP Datasheet Page 8 STQ3NK50ZR-AP Datasheet Page 9 STQ3NK50ZR-AP Datasheet Page 10 STQ3NK50ZR-AP Datasheet Page 11

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STQ3NK50ZR-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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