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STS10N3LH5

STS10N3LH5

For Reference Only

Part Number STS10N3LH5
PNEDA Part # STS10N3LH5
Description MOSFET N-CH 30V 10A 8-SOIC
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,632
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS10N3LH5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS10N3LH5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS10N3LH5, STS10N3LH5 Datasheet (Total Pages: 13, Size: 773.19 KB)
PDFSTS10N3LH5 Datasheet Cover
STS10N3LH5 Datasheet Page 2 STS10N3LH5 Datasheet Page 3 STS10N3LH5 Datasheet Page 4 STS10N3LH5 Datasheet Page 5 STS10N3LH5 Datasheet Page 6 STS10N3LH5 Datasheet Page 7 STS10N3LH5 Datasheet Page 8 STS10N3LH5 Datasheet Page 9 STS10N3LH5 Datasheet Page 10 STS10N3LH5 Datasheet Page 11

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STS10N3LH5 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs21mOhm @ 5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 5V
Vgs (Max)±22V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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