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STS30N3LLH6

STS30N3LLH6

For Reference Only

Part Number STS30N3LLH6
PNEDA Part # STS30N3LLH6
Description MOSFET N-CH 30V 30A 8-SOIC
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 20 - Jul 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS30N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS30N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS30N3LLH6, STS30N3LLH6 Datasheet (Total Pages: 13, Size: 770.63 KB)
PDFSTS30N3LLH6 Datasheet Cover
STS30N3LLH6 Datasheet Page 2 STS30N3LLH6 Datasheet Page 3 STS30N3LLH6 Datasheet Page 4 STS30N3LLH6 Datasheet Page 5 STS30N3LLH6 Datasheet Page 6 STS30N3LLH6 Datasheet Page 7 STS30N3LLH6 Datasheet Page 8 STS30N3LLH6 Datasheet Page 9 STS30N3LLH6 Datasheet Page 10 STS30N3LLH6 Datasheet Page 11

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STS30N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4040pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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