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STU12N60M2

STU12N60M2

For Reference Only

Part Number STU12N60M2
PNEDA Part # STU12N60M2
Description MOSFET N-CH 600V 9A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,690
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU12N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU12N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU12N60M2, STU12N60M2 Datasheet (Total Pages: 12, Size: 370.93 KB)
PDFSTU12N60M2 Datasheet Cover
STU12N60M2 Datasheet Page 2 STU12N60M2 Datasheet Page 3 STU12N60M2 Datasheet Page 4 STU12N60M2 Datasheet Page 5 STU12N60M2 Datasheet Page 6 STU12N60M2 Datasheet Page 7 STU12N60M2 Datasheet Page 8 STU12N60M2 Datasheet Page 9 STU12N60M2 Datasheet Page 10 STU12N60M2 Datasheet Page 11

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STU12N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds538pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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