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STU13N60M2

STU13N60M2

For Reference Only

Part Number STU13N60M2
PNEDA Part # STU13N60M2
Description MOSFET N-CH 600V 11A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 23,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU13N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU13N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU13N60M2, STU13N60M2 Datasheet (Total Pages: 18, Size: 1,256.68 KB)
PDFSTW13N60M2 Datasheet Cover
STW13N60M2 Datasheet Page 2 STW13N60M2 Datasheet Page 3 STW13N60M2 Datasheet Page 4 STW13N60M2 Datasheet Page 5 STW13N60M2 Datasheet Page 6 STW13N60M2 Datasheet Page 7 STW13N60M2 Datasheet Page 8 STW13N60M2 Datasheet Page 9 STW13N60M2 Datasheet Page 10 STW13N60M2 Datasheet Page 11

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STU13N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds580pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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