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STU150N3LLH6

STU150N3LLH6

For Reference Only

Part Number STU150N3LLH6
PNEDA Part # STU150N3LLH6
Description MOSFET N-CH 30V 80A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 27,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU150N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU150N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU150N3LLH6, STU150N3LLH6 Datasheet (Total Pages: 16, Size: 943.12 KB)
PDFSTP150N3LLH6 Datasheet Cover
STP150N3LLH6 Datasheet Page 2 STP150N3LLH6 Datasheet Page 3 STP150N3LLH6 Datasheet Page 4 STP150N3LLH6 Datasheet Page 5 STP150N3LLH6 Datasheet Page 6 STP150N3LLH6 Datasheet Page 7 STP150N3LLH6 Datasheet Page 8 STP150N3LLH6 Datasheet Page 9 STP150N3LLH6 Datasheet Page 10 STP150N3LLH6 Datasheet Page 11

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STU150N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4040pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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