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STU16N65M2

STU16N65M2

For Reference Only

Part Number STU16N65M2
PNEDA Part # STU16N65M2
Description MOSFET N-CH 650V 11A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,620
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU16N65M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU16N65M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU16N65M2, STU16N65M2 Datasheet (Total Pages: 16, Size: 818.28 KB)
PDFSTU16N65M2 Datasheet Cover
STU16N65M2 Datasheet Page 2 STU16N65M2 Datasheet Page 3 STU16N65M2 Datasheet Page 4 STU16N65M2 Datasheet Page 5 STU16N65M2 Datasheet Page 6 STU16N65M2 Datasheet Page 7 STU16N65M2 Datasheet Page 8 STU16N65M2 Datasheet Page 9 STU16N65M2 Datasheet Page 10 STU16N65M2 Datasheet Page 11

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STU16N65M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds718pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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