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STU6N60M2

STU6N60M2

For Reference Only

Part Number STU6N60M2
PNEDA Part # STU6N60M2
Description MOSFET N-CH 600V IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 33,198
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU6N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU6N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU6N60M2, STU6N60M2 Datasheet (Total Pages: 18, Size: 1,109.98 KB)
PDFSTP6N60M2 Datasheet Cover
STP6N60M2 Datasheet Page 2 STP6N60M2 Datasheet Page 3 STP6N60M2 Datasheet Page 4 STP6N60M2 Datasheet Page 5 STP6N60M2 Datasheet Page 6 STP6N60M2 Datasheet Page 7 STP6N60M2 Datasheet Page 8 STP6N60M2 Datasheet Page 9 STP6N60M2 Datasheet Page 10 STP6N60M2 Datasheet Page 11

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STU6N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds232pF @ 100V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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