Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STV160NF03LAT4

STV160NF03LAT4

For Reference Only

Part Number STV160NF03LAT4
PNEDA Part # STV160NF03LAT4
Description MOSFET N-CH 30V 160A POWERSO-10
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STV160NF03LAT4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTV160NF03LAT4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STV160NF03LAT4, STV160NF03LAT4 Datasheet (Total Pages: 8, Size: 545.86 KB)
PDFSTV160NF03LAT4 Datasheet Cover
STV160NF03LAT4 Datasheet Page 2 STV160NF03LAT4 Datasheet Page 3 STV160NF03LAT4 Datasheet Page 4 STV160NF03LAT4 Datasheet Page 5 STV160NF03LAT4 Datasheet Page 6 STV160NF03LAT4 Datasheet Page 7 STV160NF03LAT4 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STV160NF03LAT4 Datasheet
  • where to find STV160NF03LAT4
  • STMicroelectronics

  • STMicroelectronics STV160NF03LAT4
  • STV160NF03LAT4 PDF Datasheet
  • STV160NF03LAT4 Stock

  • STV160NF03LAT4 Pinout
  • Datasheet STV160NF03LAT4
  • STV160NF03LAT4 Supplier

  • STMicroelectronics Distributor
  • STV160NF03LAT4 Price
  • STV160NF03LAT4 Distributor

STV160NF03LAT4 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds5350pF @ 25V
FET Feature-
Power Dissipation (Max)210W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PowerSO
Package / CasePowerSO-10 Exposed Bottom Pad

The Products You May Be Interested In

2N7227

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

315mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

SKI06106

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

57A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 28.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 650µA

Gate Charge (Qg) (Max) @ Vgs

38.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 25V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTR1P02T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

180mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

165pF @ 5V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SSM3J35AMFV,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

42pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

VESM

Package / Case

SOT-723

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6212pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

AT49F040-12TI

AT49F040-12TI

Microchip Technology

IC FLASH 4M PARALLEL 32TSOP

LTST-C190TBKT

LTST-C190TBKT

Lite-On Inc.

LED BLUE CLEAR CHIP SMD

SP3010-04UTG

SP3010-04UTG

Littelfuse

TVS DIODE 6V 12.3V 10UDFN

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

MAX15027ATB/V+T

MAX15027ATB/V+T

Maxim Integrated

IC REG LINEAR POS ADJ 1A 10TDFN

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

MMBT2222AT

MMBT2222AT

ON Semiconductor

TRANS NPN 40V 0.6A SOT523F

XC7VX690T-2FFG1761I

XC7VX690T-2FFG1761I

Xilinx

IC FPGA 850 I/O 1761FCBGA

M24M02-DRMN6TP

M24M02-DRMN6TP

STMicroelectronics

IC EEPROM 2M I2C 1MHZ 8SO

RCLAMP0854P.TCT

RCLAMP0854P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6

ATXMEGA32E5-AUR

ATXMEGA32E5-AUR

Microchip Technology

IC MCU 8/16BIT 32KB FLASH 32TQFP