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STV200N55F3

STV200N55F3

For Reference Only

Part Number STV200N55F3
PNEDA Part # STV200N55F3
Description MOSFET N-CH 55V 200A POWERSO-10
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STV200N55F3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTV200N55F3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STV200N55F3, STV200N55F3 Datasheet (Total Pages: 12, Size: 487.92 KB)
PDFSTV200N55F3 Datasheet Cover
STV200N55F3 Datasheet Page 2 STV200N55F3 Datasheet Page 3 STV200N55F3 Datasheet Page 4 STV200N55F3 Datasheet Page 5 STV200N55F3 Datasheet Page 6 STV200N55F3 Datasheet Page 7 STV200N55F3 Datasheet Page 8 STV200N55F3 Datasheet Page 9 STV200N55F3 Datasheet Page 10 STV200N55F3 Datasheet Page 11

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STV200N55F3 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PowerSO
Package / CasePowerSO-10 Exposed Bottom Pad

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