Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW13N95K3

STW13N95K3

For Reference Only

Part Number STW13N95K3
PNEDA Part # STW13N95K3
Description MOSFET N-CH 950V 10A TO-247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW13N95K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW13N95K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW13N95K3, STW13N95K3 Datasheet (Total Pages: 19, Size: 856.37 KB)
PDFSTW13N95K3 Datasheet Cover
STW13N95K3 Datasheet Page 2 STW13N95K3 Datasheet Page 3 STW13N95K3 Datasheet Page 4 STW13N95K3 Datasheet Page 5 STW13N95K3 Datasheet Page 6 STW13N95K3 Datasheet Page 7 STW13N95K3 Datasheet Page 8 STW13N95K3 Datasheet Page 9 STW13N95K3 Datasheet Page 10 STW13N95K3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW13N95K3 Datasheet
  • where to find STW13N95K3
  • STMicroelectronics

  • STMicroelectronics STW13N95K3
  • STW13N95K3 PDF Datasheet
  • STW13N95K3 Stock

  • STW13N95K3 Pinout
  • Datasheet STW13N95K3
  • STW13N95K3 Supplier

  • STMicroelectronics Distributor
  • STW13N95K3 Price
  • STW13N95K3 Distributor

STW13N95K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)950V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs850mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1620pF @ 100V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

The Products You May Be Interested In

TPN3300ANH,LQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVIII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

33mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

880pF @ 50V

FET Feature

-

Power Dissipation (Max)

700mW (Ta), 27W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSON Advance (3.3x3.3)

Package / Case

8-PowerVDFN

IPB80R290C3AATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 100V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDG315N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

120mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

220pF @ 15V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88 (SC-70-6)

Package / Case

6-TSSOP, SC-88, SOT-363

IRLW510ATM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

440mOhm @ 2.8A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

235pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IPP80N06S2L07AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3160pF @ 25V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

SMCJ48CA

SMCJ48CA

Taiwan Semiconductor Corporation

TVS DIODE 48V 77.4V SMC

SMCJ15A-13-F

SMCJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMC

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

FSA3157P6X

FSA3157P6X

ON Semiconductor

IC SWITCH MULTIMEDIA SC70-6

AD829JRZ

AD829JRZ

Analog Devices

IC VIDEO OPAMP LN HS 8-SOIC

AS5163-HTSM

AS5163-HTSM

ams

SENSOR ANGLE 360DEG SMD

ADM211ARSZ-REEL

ADM211ARSZ-REEL

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

AD8250ARMZ-R7

AD8250ARMZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

742792410

742792410

Wurth Electronics

FERRITE BEAD 60 OHM 1806 1LN

PBSS5250X,115

PBSS5250X,115

Nexperia

TRANS PNP 50V 2A SOT89

TMP36GT9Z

TMP36GT9Z

Analog Devices

SENSOR ANALOG -40C-125C TO92-3

11R472C

11R472C

Murata Power Solutions

FIXED IND 4.7UH 1.3A 90 MOHM TH