Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW21N90K5

STW21N90K5

For Reference Only

Part Number STW21N90K5
PNEDA Part # STW21N90K5
Description MOSFET N-CH 900V 18.5A TO-247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,670
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW21N90K5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW21N90K5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW21N90K5, STW21N90K5 Datasheet (Total Pages: 22, Size: 992.5 KB)
PDFSTB21N90K5 Datasheet Cover
STB21N90K5 Datasheet Page 2 STB21N90K5 Datasheet Page 3 STB21N90K5 Datasheet Page 4 STB21N90K5 Datasheet Page 5 STB21N90K5 Datasheet Page 6 STB21N90K5 Datasheet Page 7 STB21N90K5 Datasheet Page 8 STB21N90K5 Datasheet Page 9 STB21N90K5 Datasheet Page 10 STB21N90K5 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW21N90K5 Datasheet
  • where to find STW21N90K5
  • STMicroelectronics

  • STMicroelectronics STW21N90K5
  • STW21N90K5 PDF Datasheet
  • STW21N90K5 Stock

  • STW21N90K5 Pinout
  • Datasheet STW21N90K5
  • STW21N90K5 Supplier

  • STMicroelectronics Distributor
  • STW21N90K5 Price
  • STW21N90K5 Distributor

STW21N90K5 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH5™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1645pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

The Products You May Be Interested In

IRFZ48NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1970pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IXFY4N60P3

IXYS

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.9nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

365pF @ 25V

FET Feature

-

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

2N7002W-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323

FQA140N10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

285nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

7900pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

SIHG039N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

39mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

126nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4369pF @ 100V

FET Feature

-

Power Dissipation (Max)

357W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

VI-LU3-CU

VI-LU3-CU

Vicor

POWER SUPP 24V 8.33A

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

SMBJ58A

SMBJ58A

Taiwan Semiconductor Corporation

TVS DIODE 58V 93.6V DO214AA

PI4ULS5V202UEX

PI4ULS5V202UEX

Diodes Incorporated

IC TRNSLTR BIDIRECTIONAL 8MSOP

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

EPCS4SI8N

EPCS4SI8N

Intel

IC CONFIG DEVICE 4MBIT 8SOIC

3314J-1-104E

3314J-1-104E

Bourns

TRIMMER 100KOHM 0.25W J LEAD TOP

AT24C1024BW-SH-T

AT24C1024BW-SH-T

Microchip Technology

IC EEPROM 1M I2C 1MHZ 8SOIC

CS240610

CS240610

Powerex Inc.

DIODE GP 600V 100A POWRBLOK

PIC12F752-I/SN

PIC12F752-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

AT91FR40162S-CJ

AT91FR40162S-CJ

Microchip Technology

IC MCU 16/32BIT 2MB FLASH 121BGA