Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW21NM60N

STW21NM60N

For Reference Only

Part Number STW21NM60N
PNEDA Part # STW21NM60N
Description MOSFET N-CH 600V 17A TO-247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW21NM60N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW21NM60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW21NM60N, STW21NM60N Datasheet (Total Pages: 18, Size: 564.83 KB)
PDFSTB21NM60N-1 Datasheet Cover
STB21NM60N-1 Datasheet Page 2 STB21NM60N-1 Datasheet Page 3 STB21NM60N-1 Datasheet Page 4 STB21NM60N-1 Datasheet Page 5 STB21NM60N-1 Datasheet Page 6 STB21NM60N-1 Datasheet Page 7 STB21NM60N-1 Datasheet Page 8 STB21NM60N-1 Datasheet Page 9 STB21NM60N-1 Datasheet Page 10 STB21NM60N-1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW21NM60N Datasheet
  • where to find STW21NM60N
  • STMicroelectronics

  • STMicroelectronics STW21NM60N
  • STW21NM60N PDF Datasheet
  • STW21NM60N Stock

  • STW21NM60N Pinout
  • Datasheet STW21NM60N
  • STW21NM60N Supplier

  • STMicroelectronics Distributor
  • STW21NM60N Price
  • STW21NM60N Distributor

STW21NM60N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 50V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

The Products You May Be Interested In

DMN3008SFG-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

17.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3690pF @ 10V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

SSM3J56ACT,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

390mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

100pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

CST3

Package / Case

SC-101, SOT-883

RJ1G08CGNTLL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

31.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 20V

FET Feature

-

Power Dissipation (Max)

78W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LPTL

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI8410DB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

37mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 10V

FET Feature

-

Power Dissipation (Max)

780mW (Ta), 1.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Micro Foot (1x1)

Package / Case

4-UFBGA

JANTX2N6766T1

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/543

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

Recently Sold

CEP125NP-1R0MC-HD

CEP125NP-1R0MC-HD

Sumida

FIXED IND 1UH 16.5A 2.5 MOHM SMD

MAX3491EESD+T

MAX3491EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

FDLL4148

FDLL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA LL34

AD22037Z

AD22037Z

Analog Devices

ACCELEROMETER 18G ANALOG 8CLCC

1SS355TE-17

1SS355TE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

IPS5451S

IPS5451S

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

AT24C256C-SSHL-T

AT24C256C-SSHL-T

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8SOIC

T520B127M006ATE035

T520B127M006ATE035

KEMET

CAP TANT POLY 120UF 6.3V 3528

ADM6820ARJZ-REEL7

ADM6820ARJZ-REEL7

Analog Devices

IC POWER SEQUENCER SOT23-6

BCP53-16T1G

BCP53-16T1G

ON Semiconductor

TRANS PNP 80V 1.5A SOT-223

0154002.DRT

0154002.DRT

Littelfuse

FUSE BOARD MNT 2A 125VAC/VDC SMD

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP