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STW42N60M2-EP

STW42N60M2-EP

For Reference Only

Part Number STW42N60M2-EP
PNEDA Part # STW42N60M2-EP
Description MOSFET N-CH 600V 34A EP TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 18,648
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 21 - Jul 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW42N60M2-EP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW42N60M2-EP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW42N60M2-EP, STW42N60M2-EP Datasheet (Total Pages: 20, Size: 380.67 KB)
PDFSTB42N60M2-EP Datasheet Cover
STB42N60M2-EP Datasheet Page 2 STB42N60M2-EP Datasheet Page 3 STB42N60M2-EP Datasheet Page 4 STB42N60M2-EP Datasheet Page 5 STB42N60M2-EP Datasheet Page 6 STB42N60M2-EP Datasheet Page 7 STB42N60M2-EP Datasheet Page 8 STB42N60M2-EP Datasheet Page 9 STB42N60M2-EP Datasheet Page 10 STB42N60M2-EP Datasheet Page 11

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STW42N60M2-EP Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2-EP
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs87mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2370pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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