Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW48N60M2-4

STW48N60M2-4

For Reference Only

Part Number STW48N60M2-4
PNEDA Part # STW48N60M2-4
Description MOSFET N-CH 600V 42A TO247-4
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,632
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW48N60M2-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW48N60M2-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW48N60M2-4, STW48N60M2-4 Datasheet (Total Pages: 12, Size: 713.41 KB)
PDFSTW48N60M2-4 Datasheet Cover
STW48N60M2-4 Datasheet Page 2 STW48N60M2-4 Datasheet Page 3 STW48N60M2-4 Datasheet Page 4 STW48N60M2-4 Datasheet Page 5 STW48N60M2-4 Datasheet Page 6 STW48N60M2-4 Datasheet Page 7 STW48N60M2-4 Datasheet Page 8 STW48N60M2-4 Datasheet Page 9 STW48N60M2-4 Datasheet Page 10 STW48N60M2-4 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW48N60M2-4 Datasheet
  • where to find STW48N60M2-4
  • STMicroelectronics

  • STMicroelectronics STW48N60M2-4
  • STW48N60M2-4 PDF Datasheet
  • STW48N60M2-4 Stock

  • STW48N60M2-4 Pinout
  • Datasheet STW48N60M2-4
  • STW48N60M2-4 Supplier

  • STMicroelectronics Distributor
  • STW48N60M2-4 Price
  • STW48N60M2-4 Distributor

STW48N60M2-4 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3060pF @ 100V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

The Products You May Be Interested In

STP3LN62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

386pF @ 50V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

AUIRF3805S-7TRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 140A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7820pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK (7-Lead)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

SQP50P03-07_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5380pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

2SK353900L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

15Ohm @ 10mA, 2.5V

Vgs(th) (Max) @ Id

1.5V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±7V

Input Capacitance (Ciss) (Max) @ Vds

12pF @ 3V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMini3-G1

Package / Case

SC-70, SOT-323

IXTN120N25

IXYS

Manufacturer

IXYS

Series

MegaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

20mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

7700pF @ 25V

FET Feature

-

Power Dissipation (Max)

730W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

Recently Sold

PIC18F65J15-I/PT

PIC18F65J15-I/PT

Microchip Technology

IC MCU 8BIT 48KB FLASH 64TQFP

LTM4644EY#PBF

LTM4644EY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 4X0.6-5.5V

EC3SA-12S15N

EC3SA-12S15N

Cincon Electronics Co. LTD

ISOLATED DC/DC CONVERTERS 2.31-3

170M3618

170M3618

Eaton - Bussmann Electrical Division

FUSE SQUARE 350A 700VAC RECT

24LC01BT-I/OT

24LC01BT-I/OT

Microchip Technology

IC EEPROM 1K I2C 400KHZ SOT23-5

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

VO2630-X007T

VO2630-X007T

Vishay Semiconductor Opto Division

OPTOISO 5.3KV 2CH OPEN DRN 8SMD

S-8254AAFFT-TB-G

S-8254AAFFT-TB-G

ABLIC

IC LI-ION BATT PROTECT 16-TSSOP

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

MURS120-E3/52T

MURS120-E3/52T

Vishay Semiconductor Diodes Division

DIODE GP 200V 1A DO214AA

IRF7470PBF

IRF7470PBF

Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC