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STW48N60M2-4

STW48N60M2-4

For Reference Only

Part Number STW48N60M2-4
PNEDA Part # STW48N60M2-4
Description MOSFET N-CH 600V 42A TO247-4
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 16,632
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW48N60M2-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW48N60M2-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW48N60M2-4, STW48N60M2-4 Datasheet (Total Pages: 12, Size: 713.41 KB)
PDFSTW48N60M2-4 Datasheet Cover
STW48N60M2-4 Datasheet Page 2 STW48N60M2-4 Datasheet Page 3 STW48N60M2-4 Datasheet Page 4 STW48N60M2-4 Datasheet Page 5 STW48N60M2-4 Datasheet Page 6 STW48N60M2-4 Datasheet Page 7 STW48N60M2-4 Datasheet Page 8 STW48N60M2-4 Datasheet Page 9 STW48N60M2-4 Datasheet Page 10 STW48N60M2-4 Datasheet Page 11

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STW48N60M2-4 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3060pF @ 100V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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