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STW56N60M2-4

STW56N60M2-4

For Reference Only

Part Number STW56N60M2-4
PNEDA Part # STW56N60M2-4
Description MOSFET N-CH 600V 52A TO247-4
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW56N60M2-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW56N60M2-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW56N60M2-4, STW56N60M2-4 Datasheet (Total Pages: 12, Size: 907.54 KB)
PDFSTW56N60M2-4 Datasheet Cover
STW56N60M2-4 Datasheet Page 2 STW56N60M2-4 Datasheet Page 3 STW56N60M2-4 Datasheet Page 4 STW56N60M2-4 Datasheet Page 5 STW56N60M2-4 Datasheet Page 6 STW56N60M2-4 Datasheet Page 7 STW56N60M2-4 Datasheet Page 8 STW56N60M2-4 Datasheet Page 9 STW56N60M2-4 Datasheet Page 10 STW56N60M2-4 Datasheet Page 11

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STW56N60M2-4 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs55mOhm @ 26A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3750pF @ 100V
FET Feature-
Power Dissipation (Max)350W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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