Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW58N60DM2AG

STW58N60DM2AG

For Reference Only

Part Number STW58N60DM2AG
PNEDA Part # STW58N60DM2AG
Description MOSFET N-CH 600V 50A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW58N60DM2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW58N60DM2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW58N60DM2AG, STW58N60DM2AG Datasheet (Total Pages: 12, Size: 722.76 KB)
PDFSTW58N60DM2AG Datasheet Cover
STW58N60DM2AG Datasheet Page 2 STW58N60DM2AG Datasheet Page 3 STW58N60DM2AG Datasheet Page 4 STW58N60DM2AG Datasheet Page 5 STW58N60DM2AG Datasheet Page 6 STW58N60DM2AG Datasheet Page 7 STW58N60DM2AG Datasheet Page 8 STW58N60DM2AG Datasheet Page 9 STW58N60DM2AG Datasheet Page 10 STW58N60DM2AG Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW58N60DM2AG Datasheet
  • where to find STW58N60DM2AG
  • STMicroelectronics

  • STMicroelectronics STW58N60DM2AG
  • STW58N60DM2AG PDF Datasheet
  • STW58N60DM2AG Stock

  • STW58N60DM2AG Pinout
  • Datasheet STW58N60DM2AG
  • STW58N60DM2AG Supplier

  • STMicroelectronics Distributor
  • STW58N60DM2AG Price
  • STW58N60DM2AG Distributor

STW58N60DM2AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 100V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

The Products You May Be Interested In

IPD60R280CFD7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

807pF @ 400V

FET Feature

-

Power Dissipation (Max)

51W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDA8440

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

450nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

24740pF @ 25V

FET Feature

-

Power Dissipation (Max)

306W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

5LN01M-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

7.8Ohm @ 50mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.57nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

6.6pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-MCP

Package / Case

SC-70, SOT-323

FQP6N70

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 3.1A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

142W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

VN0300L-G-P002

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

640mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Recently Sold

MC9S08LL8CLF

MC9S08LL8CLF

NXP

IC MCU 8BIT 10KB FLASH 48LQFP

ADP1706ACPZ-3.3-R7

ADP1706ACPZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 1A 8LFCSP

PIC18F2331-I/SO

PIC18F2331-I/SO

Microchip Technology

IC MCU 8BIT 8KB FLASH 28SOIC

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

MC14099BDWR2G

MC14099BDWR2G

ON Semiconductor

IC LATCH 8BIT ADDRESS 16-SOIC

MAX3095ESE+

MAX3095ESE+

Maxim Integrated

IC RECEIVER 0/4 16SO

PFS7539H

PFS7539H

Power Integrations

IC PFC CTLR 1000W 180VAC 16ESIP

AD780ARZ

AD780ARZ

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

SMAJ40CA

SMAJ40CA

Bourns

TVS DIODE 40V 64.5V SMA

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

SP3304NUTG

SP3304NUTG

Littelfuse

TVS DIODE 3.3V 11.5V 10UDFN

XC6SLX9-2TQG144C

XC6SLX9-2TQG144C

Xilinx

IC FPGA 102 I/O 144TQFP