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STW58N60DM2AG

STW58N60DM2AG

For Reference Only

Part Number STW58N60DM2AG
PNEDA Part # STW58N60DM2AG
Description MOSFET N-CH 600V 50A
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW58N60DM2AG Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW58N60DM2AG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW58N60DM2AG, STW58N60DM2AG Datasheet (Total Pages: 12, Size: 722.76 KB)
PDFSTW58N60DM2AG Datasheet Cover
STW58N60DM2AG Datasheet Page 2 STW58N60DM2AG Datasheet Page 3 STW58N60DM2AG Datasheet Page 4 STW58N60DM2AG Datasheet Page 5 STW58N60DM2AG Datasheet Page 6 STW58N60DM2AG Datasheet Page 7 STW58N60DM2AG Datasheet Page 8 STW58N60DM2AG Datasheet Page 9 STW58N60DM2AG Datasheet Page 10 STW58N60DM2AG Datasheet Page 11

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STW58N60DM2AG Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, MDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 100V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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