Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STWA70N60DM2

STWA70N60DM2

For Reference Only

Part Number STWA70N60DM2
PNEDA Part # STWA70N60DM2
Description MOSFET N-CHANNEL 600V 66A TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,408
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STWA70N60DM2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTWA70N60DM2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STWA70N60DM2, STWA70N60DM2 Datasheet (Total Pages: 12, Size: 372.26 KB)
PDFSTWA70N60DM2 Datasheet Cover
STWA70N60DM2 Datasheet Page 2 STWA70N60DM2 Datasheet Page 3 STWA70N60DM2 Datasheet Page 4 STWA70N60DM2 Datasheet Page 5 STWA70N60DM2 Datasheet Page 6 STWA70N60DM2 Datasheet Page 7 STWA70N60DM2 Datasheet Page 8 STWA70N60DM2 Datasheet Page 9 STWA70N60DM2 Datasheet Page 10 STWA70N60DM2 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STWA70N60DM2 Datasheet
  • where to find STWA70N60DM2
  • STMicroelectronics

  • STMicroelectronics STWA70N60DM2
  • STWA70N60DM2 PDF Datasheet
  • STWA70N60DM2 Stock

  • STWA70N60DM2 Pinout
  • Datasheet STWA70N60DM2
  • STWA70N60DM2 Supplier

  • STMicroelectronics Distributor
  • STWA70N60DM2 Price
  • STWA70N60DM2 Distributor

STWA70N60DM2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ DM2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42mOhm @ 33A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5508pF @ 100V
FET Feature-
Power Dissipation (Max)446W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

The Products You May Be Interested In

IRFU220_R4941

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

330pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

BSS123L6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id

1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

2.67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

69pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

TPH1R005PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.04mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9600pF @ 22.5V

FET Feature

-

Power Dissipation (Max)

960mW (Ta), 170W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

STP80NF03L-04

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NX7002AKAR

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4.5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.43nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

17pF @ 10V

FET Feature

-

Power Dissipation (Max)

265mW (Ta), 1.33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

S29AL016J70TFI020

S29AL016J70TFI020

Cypress Semiconductor

IC FLASH 16M PARALLEL 48TSOP

TS30013-M050QFNR

TS30013-M050QFNR

Semtech

IC REG BUCK 5V 3A 16QFN

ATMEGA48PA-AU

ATMEGA48PA-AU

Microchip Technology

IC MCU 8BIT 4KB FLASH 32TQFP

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB

74HC259D

74HC259D

Toshiba Semiconductor and Storage

IC 8BIT ADDRESSABLE LATCH 16SOIC

RB521S-30TE61

RB521S-30TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA EMD2

LTST-C150TBKT

LTST-C150TBKT

Lite-On Inc.

LED BLUE CLEAR 1206 SMD

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

MBT3906DW1T1G

MBT3906DW1T1G

ON Semiconductor

TRANS 2PNP 40V 0.2A SC88

DEA202450BT-1294C1-H

DEA202450BT-1294C1-H

TDK

FILTER BANDPASS WLAN&BLUETOOTH

CEP125NP-1R0MC-HD

CEP125NP-1R0MC-HD

Sumida

FIXED IND 1UH 16.5A 2.5 MOHM SMD

74HC74D

74HC74D

Toshiba Semiconductor and Storage

IC FF D-TYPE DUAL 1BIT 14SOIC