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SUD35N10-26P-E3

SUD35N10-26P-E3

For Reference Only

Part Number SUD35N10-26P-E3
PNEDA Part # SUD35N10-26P-E3
Description MOSFET N-CH 100V 35A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 35,010
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD35N10-26P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD35N10-26P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD35N10-26P-E3, SUD35N10-26P-E3 Datasheet (Total Pages: 9, Size: 181.01 KB)
PDFSUD35N10-26P-T4GE3 Datasheet Cover
SUD35N10-26P-T4GE3 Datasheet Page 2 SUD35N10-26P-T4GE3 Datasheet Page 3 SUD35N10-26P-T4GE3 Datasheet Page 4 SUD35N10-26P-T4GE3 Datasheet Page 5 SUD35N10-26P-T4GE3 Datasheet Page 6 SUD35N10-26P-T4GE3 Datasheet Page 7 SUD35N10-26P-T4GE3 Datasheet Page 8 SUD35N10-26P-T4GE3 Datasheet Page 9

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SUD35N10-26P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 12V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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