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SUD40N02-3M3P-E3

SUD40N02-3M3P-E3

For Reference Only

Part Number SUD40N02-3M3P-E3
PNEDA Part # SUD40N02-3M3P-E3
Description MOSFET N-CH 20V 24.4A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,542
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUD40N02-3M3P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUD40N02-3M3P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUD40N02-3M3P-E3, SUD40N02-3M3P-E3 Datasheet (Total Pages: 7, Size: 132.2 KB)
PDFSUD40N02-3M3P-E3 Datasheet Cover
SUD40N02-3M3P-E3 Datasheet Page 2 SUD40N02-3M3P-E3 Datasheet Page 3 SUD40N02-3M3P-E3 Datasheet Page 4 SUD40N02-3M3P-E3 Datasheet Page 5 SUD40N02-3M3P-E3 Datasheet Page 6 SUD40N02-3M3P-E3 Datasheet Page 7

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SUD40N02-3M3P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C24.4A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6520pF @ 10V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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