Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUM110N04-05H-E3

SUM110N04-05H-E3

For Reference Only

Part Number SUM110N04-05H-E3
PNEDA Part # SUM110N04-05H-E3
Description MOSFET N-CH 40V 110A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM110N04-05H-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM110N04-05H-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM110N04-05H-E3, SUM110N04-05H-E3 Datasheet (Total Pages: 6, Size: 90.59 KB)
PDFSUM110N04-05H-E3 Datasheet Cover
SUM110N04-05H-E3 Datasheet Page 2 SUM110N04-05H-E3 Datasheet Page 3 SUM110N04-05H-E3 Datasheet Page 4 SUM110N04-05H-E3 Datasheet Page 5 SUM110N04-05H-E3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUM110N04-05H-E3 Datasheet
  • where to find SUM110N04-05H-E3
  • Vishay Siliconix

  • Vishay Siliconix SUM110N04-05H-E3
  • SUM110N04-05H-E3 PDF Datasheet
  • SUM110N04-05H-E3 Stock

  • SUM110N04-05H-E3 Pinout
  • Datasheet SUM110N04-05H-E3
  • SUM110N04-05H-E3 Supplier

  • Vishay Siliconix Distributor
  • SUM110N04-05H-E3 Price
  • SUM110N04-05H-E3 Distributor

SUM110N04-05H-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6700pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

FDB12N50UTM_WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FRFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1395pF @ 25V

FET Feature

-

Power Dissipation (Max)

165W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPI60R190C6XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 100V

FET Feature

-

Power Dissipation (Max)

151W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

PMZB790SN,315

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

650mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

940mOhm @ 300mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

35pF @ 30V

FET Feature

-

Power Dissipation (Max)

360mW (Ta), 2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006B-3

Package / Case

3-XFDFN

FQD3N30TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

TK380P60Y,RQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

4V @ 360µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

590pF @ 300V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

1N4007G

1N4007G

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

HSMP-3820-TR1G

HSMP-3820-TR1G

Broadcom

RF DIODE PIN 50V SOT23-3

MC33161PG

MC33161PG

ON Semiconductor

IC MONITOR VOLTAGE UNIV 8DIP

ADF4113BRU

ADF4113BRU

Analog Devices

IC SYNTH PLL RF 4.0GHZ 16-TSSOP

APT1608F3C

APT1608F3C

Kingbright

EMITTER IR 940NM 50MA 603

MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP-IT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL 48TSOP I

ADUM1201CRZ-RL7

ADUM1201CRZ-RL7

Analog Devices

DGTL ISO 2.5KV GEN PURP 8SOIC

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120

ATXMEGA16A4U-AUR

ATXMEGA16A4U-AUR

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

MMSZ4700T1G

MMSZ4700T1G

ON Semiconductor

DIODE ZENER 13V 500MW SOD123