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SUM110N04-2M1P-E3

SUM110N04-2M1P-E3

For Reference Only

Part Number SUM110N04-2M1P-E3
PNEDA Part # SUM110N04-2M1P-E3
Description MOSFET N-CH 40V 29A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,636
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM110N04-2M1P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM110N04-2M1P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM110N04-2M1P-E3, SUM110N04-2M1P-E3 Datasheet (Total Pages: 8, Size: 145.24 KB)
PDFSUM110N04-2M1P-E3 Datasheet Cover
SUM110N04-2M1P-E3 Datasheet Page 2 SUM110N04-2M1P-E3 Datasheet Page 3 SUM110N04-2M1P-E3 Datasheet Page 4 SUM110N04-2M1P-E3 Datasheet Page 5 SUM110N04-2M1P-E3 Datasheet Page 6 SUM110N04-2M1P-E3 Datasheet Page 7 SUM110N04-2M1P-E3 Datasheet Page 8

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SUM110N04-2M1P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C29A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs360nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds18800pF @ 20V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 312W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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