Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUM60020E-GE3

SUM60020E-GE3

For Reference Only

Part Number SUM60020E-GE3
PNEDA Part # SUM60020E-GE3
Description MOSFET N-CH 80V TO-263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM60020E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM60020E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM60020E-GE3, SUM60020E-GE3 Datasheet (Total Pages: 8, Size: 195.86 KB)
PDFSUM60020E-GE3 Datasheet Cover
SUM60020E-GE3 Datasheet Page 2 SUM60020E-GE3 Datasheet Page 3 SUM60020E-GE3 Datasheet Page 4 SUM60020E-GE3 Datasheet Page 5 SUM60020E-GE3 Datasheet Page 6 SUM60020E-GE3 Datasheet Page 7 SUM60020E-GE3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUM60020E-GE3 Datasheet
  • where to find SUM60020E-GE3
  • Vishay Siliconix

  • Vishay Siliconix SUM60020E-GE3
  • SUM60020E-GE3 PDF Datasheet
  • SUM60020E-GE3 Stock

  • SUM60020E-GE3 Pinout
  • Datasheet SUM60020E-GE3
  • SUM60020E-GE3 Supplier

  • Vishay Siliconix Distributor
  • SUM60020E-GE3 Price
  • SUM60020E-GE3 Distributor

SUM60020E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs227nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10680pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SIE868DF-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

145nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6100pF @ 20V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

10-PolarPAK® (L)

Package / Case

10-PolarPAK® (L)

TPC8126,LQ(CM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

+20V, -25V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP (5.5x6.0)

Package / Case

8-SOIC (0.173", 4.40mm Width)

DMN2080UCB4-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

56mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 10V

FET Feature

-

Power Dissipation (Max)

710mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-WLB0606-4

Package / Case

4-XFBGA, WLBGA

NVMTS0D4N04CLTXG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

553.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

0.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

163nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20600pF @ 20V

FET Feature

-

Power Dissipation (Max)

5W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFNW (8.3x8.4)

Package / Case

8-PowerTDFN

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

20000pF @ 25V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS264™

Package / Case

ISOPLUS264™

Recently Sold

TN2404K-T1-E3

TN2404K-T1-E3

Vishay Siliconix

MOSFET N-CH 240V 200MA SOT23-3

M93C46-WBN6

M93C46-WBN6

STMicroelectronics

IC EEPROM 1K SPI 2MHZ 8DIP

1N5335BRLG

1N5335BRLG

ON Semiconductor

DIODE ZENER 3.9V 5W AXIAL

PIC16F1786-I/SS

PIC16F1786-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SSOP

PEX8603-AB50NI G

PEX8603-AB50NI G

Broadcom

IC PCI EXPRESS SWITCH 136AQFN

MAX9814ETD+T

MAX9814ETD+T

Maxim Integrated

IC AMP AUDIO MONO AB MIC 14TDFN

ADM3251EARWZ

ADM3251EARWZ

Analog Devices

DGTL ISO 2.5KV 2CH RS232 20SOIC

MLX90615SSG-DAA-000-TU

MLX90615SSG-DAA-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO46-4

MM74HC138N

MM74HC138N

ON Semiconductor

IC DECODER 3-8LINE EXP 16-DIP

VLP8040T-6R8M

VLP8040T-6R8M

TDK

FIXED IND 6.8UH 3.6A 32 MOHM SMD

FC-135 32.7680KA-A5

FC-135 32.7680KA-A5

EPSON

CRYSTAL 32.7680 KHZ 12.5PF SMD

SML-LX0402SIC-TR

SML-LX0402SIC-TR

Lumex Opto/Components Inc.

LED RED CLEAR SMD