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SUM60N02-3M9P-E3

SUM60N02-3M9P-E3

For Reference Only

Part Number SUM60N02-3M9P-E3
PNEDA Part # SUM60N02-3M9P-E3
Description MOSFET N-CH 20V 60A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM60N02-3M9P-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM60N02-3M9P-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM60N02-3M9P-E3, SUM60N02-3M9P-E3 Datasheet (Total Pages: 8, Size: 157.6 KB)
PDFSUM60N02-3M9P-E3 Datasheet Cover
SUM60N02-3M9P-E3 Datasheet Page 2 SUM60N02-3M9P-E3 Datasheet Page 3 SUM60N02-3M9P-E3 Datasheet Page 4 SUM60N02-3M9P-E3 Datasheet Page 5 SUM60N02-3M9P-E3 Datasheet Page 6 SUM60N02-3M9P-E3 Datasheet Page 7 SUM60N02-3M9P-E3 Datasheet Page 8

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SUM60N02-3M9P-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5950pF @ 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 120W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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