Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUM75N06-09L-E3

SUM75N06-09L-E3

For Reference Only

Part Number SUM75N06-09L-E3
PNEDA Part # SUM75N06-09L-E3
Description MOSFET N-CH 60V 90A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,532
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM75N06-09L-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM75N06-09L-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM75N06-09L-E3, SUM75N06-09L-E3 Datasheet (Total Pages: 6, Size: 98.18 KB)
PDFSUM75N06-09L-E3 Datasheet Cover
SUM75N06-09L-E3 Datasheet Page 2 SUM75N06-09L-E3 Datasheet Page 3 SUM75N06-09L-E3 Datasheet Page 4 SUM75N06-09L-E3 Datasheet Page 5 SUM75N06-09L-E3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUM75N06-09L-E3 Datasheet
  • where to find SUM75N06-09L-E3
  • Vishay Siliconix

  • Vishay Siliconix SUM75N06-09L-E3
  • SUM75N06-09L-E3 PDF Datasheet
  • SUM75N06-09L-E3 Stock

  • SUM75N06-09L-E3 Pinout
  • Datasheet SUM75N06-09L-E3
  • SUM75N06-09L-E3 Supplier

  • Vishay Siliconix Distributor
  • SUM75N06-09L-E3 Price
  • SUM75N06-09L-E3 Distributor

SUM75N06-09L-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

CSD16415Q5

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.15mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

+16V, -12V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSON-CLIP (5x6)

Package / Case

8-PowerTDFN

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™

Manufacturer

IXYS

Series

GigaMOS™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

520A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

545nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

41000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

RJK1052DPB-00#J5

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4160pF @ 10V

FET Feature

-

Power Dissipation (Max)

55W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK

Package / Case

SC-100, SOT-669

STLD125N4F6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ F6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6.5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 10V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6) Dual Side

Package / Case

8-PowerWDFN

Recently Sold

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

STM6601CM2DDM6F

STM6601CM2DDM6F

STMicroelectronics

IC SUPERVISOR 3.1V 12TDFN

FDC6331L

FDC6331L

ON Semiconductor

IC LOAD SWITCH INT 8VIN SSOT-6

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

LL4148

LL4148

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD80

50ZL560MEFC12.5X25

50ZL560MEFC12.5X25

Rubycon

CAP ALUM 560UF 20% 50V RADIAL

BC560CTA

BC560CTA

ON Semiconductor

TRANS PNP 45V 0.1A TO-92

4TPE220MAZB

4TPE220MAZB

Panasonic Electronic Components

CAP TANT POLY 220UF 4V 1411

SSM3J328R,LF

SSM3J328R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

PM5022-101M-RC

PM5022-101M-RC

Bourns

FIXED IND 100UH 1.7A 190 MOHM