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SUM90330E-GE3

SUM90330E-GE3

For Reference Only

Part Number SUM90330E-GE3
PNEDA Part # SUM90330E-GE3
Description MOSFET N-CH 200V 35.1A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUM90330E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUM90330E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUM90330E-GE3, SUM90330E-GE3 Datasheet (Total Pages: 8, Size: 185.76 KB)
PDFSUM90330E-GE3 Datasheet Cover
SUM90330E-GE3 Datasheet Page 2 SUM90330E-GE3 Datasheet Page 3 SUM90330E-GE3 Datasheet Page 4 SUM90330E-GE3 Datasheet Page 5 SUM90330E-GE3 Datasheet Page 6 SUM90330E-GE3 Datasheet Page 7 SUM90330E-GE3 Datasheet Page 8

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SUM90330E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1172pF @ 100V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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