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SUP40P10-43-GE3

SUP40P10-43-GE3

For Reference Only

Part Number SUP40P10-43-GE3
PNEDA Part # SUP40P10-43-GE3
Description MOSFET P-CH 100V 36A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP40P10-43-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP40P10-43-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP40P10-43-GE3, SUP40P10-43-GE3 Datasheet (Total Pages: 6, Size: 101.83 KB)
PDFSUP40P10-43-GE3 Datasheet Cover
SUP40P10-43-GE3 Datasheet Page 2 SUP40P10-43-GE3 Datasheet Page 3 SUP40P10-43-GE3 Datasheet Page 4 SUP40P10-43-GE3 Datasheet Page 5 SUP40P10-43-GE3 Datasheet Page 6

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SUP40P10-43-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs43mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4600pF @ 50V
FET Feature-
Power Dissipation (Max)2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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