Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SUP85N15-21-E3

SUP85N15-21-E3

For Reference Only

Part Number SUP85N15-21-E3
PNEDA Part # SUP85N15-21-E3
Description MOSFET N-CH 150V 85A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 12,516
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP85N15-21-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP85N15-21-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP85N15-21-E3, SUP85N15-21-E3 Datasheet (Total Pages: 6, Size: 74.53 KB)
PDFSUP85N15-21-E3 Datasheet Cover
SUP85N15-21-E3 Datasheet Page 2 SUP85N15-21-E3 Datasheet Page 3 SUP85N15-21-E3 Datasheet Page 4 SUP85N15-21-E3 Datasheet Page 5 SUP85N15-21-E3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SUP85N15-21-E3 Datasheet
  • where to find SUP85N15-21-E3
  • Vishay Siliconix

  • Vishay Siliconix SUP85N15-21-E3
  • SUP85N15-21-E3 PDF Datasheet
  • SUP85N15-21-E3 Stock

  • SUP85N15-21-E3 Pinout
  • Datasheet SUP85N15-21-E3
  • SUP85N15-21-E3 Supplier

  • Vishay Siliconix Distributor
  • SUP85N15-21-E3 Price
  • SUP85N15-21-E3 Distributor

SUP85N15-21-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs21mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4750pF @ 25V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

IRFL210TRPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

960mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 580mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

TK35N65W5,S1F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 2.1mA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 300V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IRF3415STRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

42mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AON7462

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

900mA (Ta), 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 25W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x3)

Package / Case

8-PowerVDFN

APT47M60J

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13190pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

Recently Sold

DAN217UMTL

DAN217UMTL

Rohm Semiconductor

DIODE ARRAY GP 80V 100MA UMD3F

A42MX09-PQ100

A42MX09-PQ100

Microsemi

IC FPGA 83 I/O 100QFP

AD694ARZ-REEL

AD694ARZ-REEL

Analog Devices

IC TRANSMITTER 4-20MA 16-SOIC

1N4007-TP

1N4007-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

BTA10-700BRG

BTA10-700BRG

STMicroelectronics

TRIAC 700V 10A TO220AB

TC4426EUA

TC4426EUA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

AT24C256C-SSHL-T

AT24C256C-SSHL-T

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8SOIC

LTC6363IMS8#PBF

LTC6363IMS8#PBF

Linear Technology/Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8MSOP

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

1SS355TE-17

1SS355TE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

MAX3491EESD+T

MAX3491EESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

AT25DF321-SU

AT25DF321-SU

Adesto Technologies

IC FLASH 32M SPI 70MHZ 8SOIC