TAN300
For Reference Only
| Part Number | TAN300 |
| PNEDA Part # | TAN300 |
| Description | RF TRANS NPN 65V 1.215GHZ 55KT |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,532 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TAN300 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | TAN300 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
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Our quality-control processes guard against counterfeits while ensuring reliability and performance.
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TAN300 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 6.6dB |
| Power - Max | 1166W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1mA, 5V |
| Current - Collector (Ic) (Max) | 20A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | 55KT |
| Supplier Device Package | 55KT |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 7.5GHz Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain 12.5dB ~ 19dB Power - Max 700mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 8V Current - Collector (Ic) (Max) 150mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f) - Gain 8.1dB ~ 8.9dB Power - Max 50W DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 500mA, 5V Current - Collector (Ic) (Max) 1.8A Operating Temperature 250°C (TJ) Mounting Type Chassis Mount Package / Case M222 Supplier Device Package M222 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 11GHz Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz Gain 16.5dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 8V Current - Collector (Ic) (Max) 40mA Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-253-4, TO-253AA Supplier Device Package SOT-143B |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f) - Gain 6.7dB Power - Max 2050W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V Current - Collector (Ic) (Max) 55A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55KT Supplier Device Package 55KT |
