TC58BVG2S0HBAI4
For Reference Only
| Part Number | TC58BVG2S0HBAI4 |
| PNEDA Part # | TC58BVG2S0HBAI4 |
| Description | IC FLASH 4G PARALLEL 63TFBGA |
| Manufacturer | Toshiba Memory America, Inc. |
| Unit Price | Request a Quote |
| In Stock | 7,080 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TC58BVG2S0HBAI4 Resources
| Brand | Toshiba Memory America, Inc. |
| ECAD Module |
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| Mfr. Part Number | TC58BVG2S0HBAI4 |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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TC58BVG2S0HBAI4 Specifications
| Manufacturer | Toshiba Memory America, Inc. |
| Series | Benand™ |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-TFBGA (9x11) |
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Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 2.8ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
