TIS75_D26Z
For Reference Only
| Part Number | TIS75_D26Z |
| PNEDA Part # | TIS75_D26Z |
| Description | JFET N-CH 30V 0.35W TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,806 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TIS75_D26Z Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | TIS75_D26Z |
| Category | Semiconductors › Transistors › Transistors - JFETs |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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TIS75_D26Z Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 800mV @ 4nA |
| Input Capacitance (Ciss) (Max) @ Vds | 18pF @ 10V (VGS) |
| Resistance - RDS(On) | 60 Ohms |
| Power - Max | 350mW |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) 40V Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) Resistance - RDS(On) 100 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS) Resistance - RDS(On) 300 Ohms Power - Max 300mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 (TO-236AB) |
